Single-Photon Emitter Archives

a Schematic of FIB implantation with Si2+ ions and PL collection from single centers. The kinetic energy of 40 keV corresponds to an average implantation depth Rp = 60 nm. Si implantation into a carbon-rich and an ultrapure silicon wafer results in the formation of the G and W centers, respectively. b Confocal ZPL (1278 nm) intensity map of locally created G centers on an SOI wafer. The number of ions per spot increases logarithmically from nominally 6 (row 1) to 570 (row 15). The pattern frame is created with a fluence Φ = 1 × 1011 cm−2. The scale bar is 20 μm. The inset shows photon emission from a single G center. The color scale is different from the main panel to increase visibility. c Second-order autocorrelation function g(2)(τ) obtained with no BG correction (#I3). The red solid line is a fit to Eq. (1), yielding g(2)(0) = 0.36 ± 0.06. The thin solid line is g(2)corr(τ) calculated according to Eq. (2). The error bars represent standard deviation (SD).

Wafer-Scale Nanofabrication of Telecom Single-Photon Emitters

February 25, 2023February 25, 2023 News

Researchers from the Helmholtz-Zentrum Dresden-Rossendorf (HZDR) have made a significant breakthrough in wafer-scale nanofabrication, enabling the creation of controllable single-photon emitters in silicon for photonic quantum technologies.