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USHIO HL40033MG Datasheet
Microsoft Word – UOSE_DS_HL40033G_R3.docx
image/svg+xml
Data Sheet
HL
400
405
nm
Features
•
Optical output power:
•
Vi
•
Low operating current:
•
Low operating voltage:
•
Package:
•
Multiple
•
TE mode oscillation
Outline
1
2
φ
9.0
–
0.025
+0
1.0
±
0.4
-0
+0.1
¥
¥
¥
1
3
2
3.5
±
0.2
φ
7.2
φ
6.2
±
0.2
1.5
±
0.1
9.0
±
1.0
+0.3
-0.2
Data Sheet
400
33G
nm
/1,000mW
Violet
Laser Diode
Features
Application
Optical output power:
1,000mW (CW)
Vi
olet Lasing: 405nm Typ.
Low operating current:
1,000mA Typ.
Low operating voltage:
5.0V Max.
Package:
φ
9.0mm
Multiple
transverse mode
TE mode oscillation
•
Direct imaging for PCB
•
Industry
•
Display
•
Bio & Medical
Outline
Internal Circuit
(Unit: mm)
HL
40033
1
1
2
2
3
φ
2.54
±
0.35
0.025
±
0.1
(0.65)
(90
o
)
(φ
2.0)
0.25
Glass
2.45
Emitting Point
3-
φ
0.45
±
0.1
Laser Diode
Application
Direct imaging for PCB
Industry
Display
Bio & Medical
Internal Circuit
40033
G
LD
2
2
3
3
(
Flange)
image/svg+xml
Data Sheet HL40033G Rev3. Dec. 08. 2015
www.ushio-optosemi.com
Absolute Maximum Ratings (Tc=25°C)
Item
Symbol
Ratings
Unit
Optical output power Po 1,100 mW
LD Reverse Voltage V
R(LD)
2 V
Operating Temperature Topr 0 ~ +30 °C
Storage Temperature Tstg -40 ~ +85 °C
Optical and Electrical Characteristics (Tc=25°C)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Threshold current Ith 250 320 400 mA –
Operating current Iop – 1,000 1,300 mA Po=1,000mW
Operating voltage Vop – – 5.0 V Po=1,000mW
Beam divergence
Parallel to the junction
θ
//
5 13 25
o
Po=1,000mW,
Full angle 1/e
2
Beam divergence
Perpendicular to the junction
θ⊥
30 42 50
o
Po=1,000mW,
Full angle 1/e
2
Lasing Wavelength
λ
p
400 405 410 nm Po=1,000mW
image/svg+xml
Data Sheet HL40033G Rev3. Dec. 08. 2015
www.ushio-optosemi.com
Typical Characteristic Curves
0
500
1,500
0
200
1,200
400
600
800
1,000
0
500
1,500
1,000
0
6
4
3
5
2
1
10
100
1000
-100203040
-1010203040
1.0
2.0
1.5
-1010203040
410
405
400
395
390
Optical out put power Po(mW)
Forward currentI
F
(mA)
Threshold current vs. Case temperature
Lasing wavelength vs. Case temperatureFar field pattern
Forward voltageV
F
(V)
Threshold currentIth(mA)
Lasing wavelength
λ
p(nm)
Relative intensity
Angle,
θ
(
°
)
Case temperatureTc(
℃
)Case temperatureTc(
℃
)
Case temperatureTc(
℃
)
-40-30-20-10040302010
1.0
0.8
0.6
0.4
0.2
0
Optical output power vs. Forward current
Forward voltage vs. Forward current
Forward currentI
F
(mA)
Slope efficiency
η
s(mW/mA)
Slope efficiency vs. Case temperature
1,000
10
℃
Tc=0
℃
30
℃
25
℃
Tc=0
℃
25
℃
30
℃
10
℃
10
0
0
Po=1,000mW
Tc=25
℃
parallel
perpendicular
Po=1,000mW
Tc=25
℃
image/svg+xml
Data Sheet HL40033G Rev3. Dec. 08. 2015
www.ushio-optosemi.com
Cautions
1.USHIO OPTO SEMICONDUCTORS,INC.(UOS) neither warrants nor grants licenses of any our lights or any third
party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document, UOS
bears no responsibility for problems that may arise with third party’s right, including intellectual property rights, in
connection with use of the information contained in this document.
2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest
product standards or specifications before final design, purchase or use.
3.UOS makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office
before using the product in an application that demands especially high quality and reliability or where its failure or
malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power,
combustion control, transportation, traffic safety equipment or medical equipment for life support.
4.Design your application so that the products is used within the ranges guaranteed by UOS. particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
UOS. bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed
ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic
measures such as fail-safes, so that the equipment incorporating UOS product does not cause bodily injury, fire or other
consequential damage due to operation of the UOS product.
5.This product is not designed to be radiation resistant.
6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval
from UOS.
7.Contact our sales office for any questions regarding this document or UOS products.
1.The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2.This product (without violet laser diode) contains gallium arsenide (GaAs), which may seriously endanger your
health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as
disassembly or performing chemical experiments, when you handle the product. When disposing of the product,
please follow the laws of your country and separate it from other waste such as industrial waste and household
garbage.
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed
in writing by UOS before they become applicable to any particular order or contract. In accordance with the UOS policy of
continuous improvement specifications may change without notice. Further details are available from any UOS sales
representative.
Caution – use of controls or adjustments or performance of procedures other than those specified herein may result in hazardous
radiation exposure.
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